International Journal of Advanced Materials Research
Articles Information
International Journal of Advanced Materials Research, Vol.4, No.2, Jun. 2018, Pub. Date: Jun. 7, 2018
Inhomogeneous Model for the Investigation of the Optical Properties of the a-plane Oriented ZnO Epilayers Grown by Plasma-Assisted Molecular Beam Epitaxy
Pages: 24-28 Views: 79 Downloads: 57
Authors
[01] Alioune Aidara Diouf, Department of Physics, Faculty of Sciences and Techniques, Cheikh Anta Diop University, Dakar-Fann, Senegal; Department of Science and Technology, Iqra Bilingual Academy, Point E, Senegal.
[02] Bassirou Lo, Department of Physics, Faculty of Sciences and Techniques, Cheikh Anta Diop University, Dakar-Fann, Senegal.
[03] Balla Diop Ngom, Department of Physics, Faculty of Sciences and Techniques, Cheikh Anta Diop University, Dakar-Fann, Senegal.
[04] Abib Fall, Department of Physics, Faculty of Sciences and Techniques, Cheikh Anta Diop University, Dakar-Fann, Senegal.
[05] Aboubaker Chedikh Beye, Department of Physics, Faculty of Sciences and Techniques, Cheikh Anta Diop University, Dakar-Fann, Senegal.
Abstract
The optical properties of the a-plane oriented ZnO described by an inhomogeneous model are investigated by using another form of Gaussian function. The reflectivity spectrum of the excitons A, B and C are represented by using the same physical parameters than the theory of the spatial resonance dispersion of Hopfield model. The data obtained are well discussed and are, as well, almost the same than the experimental data found by the authors.
Keywords
Exciton A, B and C, Inhomogeneous Model, Reflectivity Spectrum, A-plane Oriented ZnO
References
[01] Kane, A. O., Ngom, B. D., Sakho, O., Zongo, S., Ndiaye, N. M., Ndlangamandla, C. L., … Maaza, M. (2018). MRS Advances, 1–11. doi: 10.1557/adv.2018.272
[02] L. Béaur, Phys. Status Solidi C 9, No. 5, 1320–1324 (2012).
[03] T.K. Subramanyam, B. Srinivasulu Naidu, S. Uthanna, Cryst. Res. Technol., 35 (2000) 1193.
[04] M. Rebien, W. Henrion, M. Bär, Ch.-H. Fischer, App. Phys. Lett., 80 (2002) 3518.19.
[05] B. Lin, Z Fu, Y. Jia, App. Phys. Lett., 79 (2001) 943.
[06] W. Li, D. Mao, F. Zhang, X. Wang, X. Liu, S. Zou, Q. Li, and J. Xu, Nucl. Instrum. Methods. Ph Res., B169 (2000) 59.
[07] K. Sato, H. Katayama-Yoshida, Jpn. J. Appl. Phys. 39 (2000) L555.
[08] B. Lo, M.B. Gaye, A. Dioum, C. M. Mohrain, M. S.Tall, J. M. Chauveau, M. Doninelli Tesseire, S. Ndiaye, A. C. Beye, Appl. Phys. A (2014) 115: 257-261.
[09] Alioune Aidara Diouf, Bassirou Lo, Abel Sambou, Oumar Sakho, Aboubaker Chedikh Beye. American Journal of Optics and Photonics. Vol. 5, No. 5, 2017, pp. 50-54. doi: 10.11648/j.ajop.20170505.11.
[10] M. Kunat, St. Gil Girol, Th. Becker, U. Burghaus, Ch. Wöll, Physical Review B 66, 081402® 2002.
[11] Xiaodong Yang, Jingwen Zhang, Zhen Bi, Yongning He, Qing’an Xu, Hongbo Wang, Weifeng Zhang, Xun Hou, Journal of Crystal Growth 284 (2005) 123-128.
[12] R. J. Collins, D. A.Kleinman, J.Phys.Chem. Solids Pergamon Press 1959, vol. 11, pp. 190-194.
[13] XuechunXiao, Bingqian Han, Gang Chen, LihongWang, YudeWang, nature, Scientific Report (2017)| 7: 40167 | DOI: 10.1038/srep40167.
[14] Sheng Chu, Mario Olmedo, Zheng Yang, Jieying Kong, Jianlin Liu, Applied Physics Letters 93, 181106 (2008).
[15] M. Lorentz, M. Hochmuch, R. Schmidt-Grund, E. M. Kaidashevi, M. Grundmann, Ann.Phys. (Leipzig) 13, N° 1, 59-60 (2004).
[16] R. Klucker, H. Nelkowski, Y. S. Park, M. Skibowski, T. S. Wagner, Phys. Stat. sol. 45, 265 (1971).
[17] Run Wu, Changsheng Xie, Materials Research Bulletin (39 (20014) 637-645.
[18] E. F. Venger, A. V. Melnichuk, L. Yu. Melnichuck, A. Pasechnik, phys. Stat. sol. (b) 188, 823 (1995).
[19] J. J. Hopfield, physical review, vol. 112, 5, 1555-1567 (1958).
[20] J. J. Hopfield, D. G. Thomas, physical review, vol. 132, 2, 563-572 (1963).
[21] L. C. Andreani, G. Panzarini, A.V. Kavokin, and M.R. Vladimirova, Phys. Rev. B 57, 4670 (1998).
[22] G. Malpuech, A. Kavokin, and G. Panzarini, Phys. Rev. B 60, 16788 (1999).
[23] Manfred Gilli, Méthodes Numériques, pp. 1-132 (2006).
[24] M. Gilli, M. Garbely, Journal of Economic Dynamics and Control 20, 1541-1556 (1996).
[25] G. H. Golub, C. F.Van Loan, J. Numer. Anal., 17 (6), 883–893 (1980).
[26] C. L. Lawson, R. J. Hanson, D. R. Kincaid, F. T. Krogh, ACM Transactions on Mathematical Software, Vol 5, N° 3, 308-323 (1979).
[27] W. H. Press, B. P. Flannery, S. A. Teukolsky, W. T. Vetterling, Geological Magazine 127, 376-377 (1990).
[28] T. Makino, Y. Segawa, M. Kawasaki, A. Ohtomo, Journal of Crystal Growth 287 (2006) 124–127.
[29] D. C. Reynolds, D. C. Look, B. Jogai, Physical Review B 60 (4), 2340 (5).
[30] S. I. Pekar, J. Exptl. Theoret. Phys. (U.S.S.R) 34, 1176-1188 (1958).
[31] S. I. Pekar, J. Exptl. Theoret. Phys. (U.S.S.R) 38, 1786-1797 (1960).
[32] J. Frenkel, Physical Review, Vol 54, pp. 17-44 (1930).
[33] Gregory H. Wannier, Physical Review, Vol 37, pp. 191-197 (1937).
600 ATLANTIC AVE, BOSTON,
MA 02210, USA
+001-6179630233
AIS is an academia-oriented and non-commercial institute aiming at providing users with a way to quickly and easily get the academic and scientific information.
Copyright © 2014 - 2017 American Institute of Science except certain content provided by third parties.