[01] I. A. Ezenwa, Department of Industrial Physics, Faculty of Physical Sciences, Chukwuemeka Odumegwu Ojukwu University, Anambra State, Nigeria. [02] C. I. Elekalachi, Department of Industrial Physics, Faculty of Physical Sciences, Chukwuemeka Odumegwu Ojukwu University, Anambra State, Nigeria.

We have fabricated CuS thin film using chemical bath deposition technique. Transmittance data of the films were obtained using a Janway 6405 UV/Visible spectrophotometer. Structural and surface morphology of the films were carried out using an x-ray diffractometer with Cukα radiation and Olumpus Optical microscope. Transmittance spectra of CuS thin film fabricated at varying concentration of ligand show moderate transmittance in the visible region, relatively low transmittance in the UV and NIR region. The highest transmittance of approximately 46% was obtained in the UV region while the Vis and NIR region has approxiately 52% and 42% respectively. XRD measurements indicate one prefered orientation corresponding to (112) atomic plane. A lattice constant of 5.434Å was calculated for CuS thin film in the [112] plane at maximum intensity of 2 = 27.8757 There was no clear cut effect of the varying concentration of ligand on the transmittance of the deposited films in the UV and visible region, but there appears to be some effect on the transmittance of CuS thin film in the infrared NIR region of the electromagnetic spectrum as a result of varying concentration of complexing agent.

Copper Sulphide, Chemical Bath Deposition, Complexing agent, Transmittance Spectra

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