[01] Sh. M. Aliev, Institute of Physics, Daghestan Science Center, Russian Academy of Sciences, Makhachkala, Daghestan, Russia. [02] I. K. Kamilov, Institute of Physics, Daghestan Science Center, Russian Academy of Sciences, Makhachkala, Daghestan, Russia. [03] K. M. Aliev, Institute of Physics, Daghestan Science Center, Russian Academy of Sciences, Makhachkala, Daghestan, Russia. [04] N. S. Abakarova, Institute of Physics, Daghestan Science Center, Russian Academy of Sciences, Makhachkala, Daghestan, Russia. [05] M. Sh. Aliev, Institute of Physics, Daghestan Science Center, Russian Academy of Sciences, Makhachkala, Daghestan, Russia. [06] Zh. G. Ibaev, Institute of Physics, Daghestan Science Center, Russian Academy of Sciences, Makhachkala, Daghestan, Russia.

A sensitive magnetic field transducer based on the mechanoelectric effect in semiconductors is designed. The transducer is a magnetic dipole with the central axis of rotation, on poles of which are mounted side needles which can exert mechanical pressure on a fixed strain-sensing semiconductive elements. The I-V curves of the semiconductive elements lead to modification in the magnetic field. The I-V curves show that the reverse I-V branch is more sensitive to the magnetic field than the forward one. The sensitivity of the produced transducer is 3.0×10³ V/A Oe.

Magnetic Field, Magnetic Dipole, Semiconductor, p-n Junction, Current-Voltage Characteristic, Mechanoelectric Effect

[01] A. L. Polyakova, Deformation of Semiconductors and Semiconductor Devices, Izdatel’stvo “Energia”, Moskow, 1979, P. 167. [02] I. I. Krivonosov, Semiconductor Electroacoustic Converters in Radio Circuit, Izdatel’stvo “Energia”, Moskow, 1977, P. 87. [03] Y. Matukura, Japan. J. Appl. Phys. 4 (1965) 632. [04] J. J. Wortman, J. R. Hansen, R. M. Burger, J. Appl. Phys. 35 (1964) 2122. [05] J. Oda, Japan. J. Appl. Phys. 5 (1966) 113. [06] H. Okamoto, H. Arigoshi, Y. Mizushima, Solid State Electronics 12 (1969) 441. [07] N. Moza, S. Bermon, F. H. Pollak, Phys. Rev. Lett. 28 (1972) 225. [08] W. Bernard, W. Rindner, H. Roth, J. Appl. Phys. 35 (1964) 1860. [09] I. N. Kupenko, A. L. Polyakova, Physics and Technology of Semiconductors 10 (1976) 807. [10] M. K. Bakhadyrkhanov, Kh. M. Iliev, Kh. F. Zikrillaev, Technical Physics Letters 22 (1998) 23. [11] G. G. Babichev, S. I. Kozlovski, V. A. Romanov, N. N. Sharan, Technical Physics 10 (2000) 45. [12] S. Chikazumi, Physics of Ferromagnetism, Izdatel’stvo “Mir”, Moscow, 1987, P. 302.